4 Revision History
Changes from Revision C (October 2016) to Revision D (December 2020)
- 注：采用 MicroStar Jr. BGA 封裝的器件采用層壓 nFBGA 封裝進(jìn)行了重新設(shè)計。這種 nFBGA 封裝提供了類似于數(shù)據(jù)表中的電氣性能。該封裝占用空間也類似于 MicroStar Jr. BGA。將在整個數(shù)據(jù)表中更新全新封裝標(biāo)識符來代替已停止使用的封裝標(biāo)識符。Go
- 將 u*jr BGA 更改為 nFBGAGo
- Changed u*jr ZQE to nFBGA ZXH. Updated thermal
information.Go
- Corrected typo from HD3SS3412 to HD3SS212Go
Changes from Revision B (January 2014) to Revision C (October 2016)
- 添加了“器件信息”表、“ESD 等級”表、“特性說明”部分、“器件功能模式”、“應(yīng)用和實(shí)施”部分、“電源相關(guān)建議”部分、“布局”部分、“器件和文檔支持”部分以及“機(jī)械、封裝和可訂購信息”部分Go
- 刪除了“訂購信息”表。請參閱數(shù)據(jù)表末尾的 POAGo
Changes from Revision A (March 2012) to Revision B (January 2014)
Changes from Revision * (December 2011) to Revision A (March 2012)
- 將說明從“-40°C 至 85°C 的完全工業(yè)溫度范圍”更改為“-40°C 至 105°C 的完全工業(yè)溫度范圍”Go
- Added Operating Temperature to the Abs Max TableGo
- Changed the Operating free-air temperature From MAX = 85°C To: 105°CGo
- Changed the values of ψJT and ψJB in the Thermal Information tableGo
- Changed the MAX value of Leakage current (Dx_SEL), VDD = 0 V From: 8μA To: 10μAGo