9 Revision History
Changes from Revision H (August 2017) to Revision I (April 2025)
- 更新了整個(gè)文檔中的表格、圖和交叉參考的編號(hào)格式Go
- 將出現(xiàn)的所有舊術(shù)語(yǔ)更改為控制器和外設(shè)Go
- 添加了 WEBENCH 鏈接Go
- Added TYPE column in the Pin Configuration and Functions
sectionGo
- Added Charged-device model (CDM) spec to the ESD Ratings
tableGo
- Changed Bias Current (Iin) from 3.7mA to 2mAGo
- Changed Shutdown Current (Iin) from 57uA to 48uAGo
- Changed BOOST UVLO Hysteresis from 0.56V to 0.93VGo
- Changed FB Bias Current from 17nA to 10nA.Go
- Updated the Application Information section to comply with
current TI format by moving sections into the Detailed Design Procedure
sectionGo
- Added the Design Requirements sectionGo
- Added the Application Curves sectionGo
- Added the Power Supply Recommendations
sectionGo
Changes from Revision G (April 2013) to Revision H (August 2017)
- 添加了應(yīng)用和實(shí)施 部分器件信息 表、引腳配置 和功能 部分、ESD 等級(jí) 表、熱性能信息 表、特性說(shuō)明 部分、器件功能模式、器件和文檔支持 部分以及機(jī)械、封裝和可訂購(gòu)信息 部分Go