4 修訂歷史記錄
Changes from J Revision (December 2016) to K Revision
- 僅有編輯更改；無(wú)技術(shù)內(nèi)容更改Go
- 添加了 WEBENCH 鏈接Go
Changes from I Revision (December 2015) to J Revision
- Deleted 從標(biāo)題中刪除了 6AGo
- Changed 在整個(gè)數(shù)據(jù)表中將輸出電流基準(zhǔn)從 6A 更改為 3AGo
- Added 接收文檔更新通知 部分Go
Changes from H Revision (July 2015) to I Revision
- 已刪除數(shù)據(jù)表中的部件編號(hào)Go
- Updated EN and PWRGD pin description Go
- Removed the ψJT thermal metric Go
Changes from G Revision (December 2014) to H Revision
- Updated backside potential to ground Go
- Updated bare die image Go
- Corrected test condition from "90% to 90%" to "10% to 90%" Go
- Added test conditions for 5962R1022102V9A part maximums Go
- Added information for the 5962R1022102V9A enable threshold, voltage reference, internally set frequency, minimum on time, and SS/TR to VSENSE matchingGo
- Corrected test condition from "90% to 90%" to "10% to 90%" Go
- Updated hysteresis for VIN UVLO threshold to 50 mV typical Go
- Added parameter units to Equation 6Go
- Updated Iss value to 2.5 µA typical Go
- Updated Ontimemin for Equation 32 from "135" to "175" ns maximum Go
Changes from F Revision (November 2013) to G Revision
- 已添加 ESD 額定值表，特性 說(shuō)明部分，器件功能模式，應(yīng)用和實(shí)施部分，電源相關(guān)建議部分，布局部分，器件和文檔支持部分以及機(jī)械、封裝和可訂購(gòu)信息部分Go
- Added Bare Die Information and Bond Pad Coordinates in Microns tableGo
Changes from E Revision (May 2013) to F Revision