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LM9061

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7V 至 26V 高側(cè)保護(hù)控制器

產(chǎn)品詳情

Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Catalog Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
SOIC (D) 8 29.4 mm2 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

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* 數(shù)據(jù)表 LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) PDF | HTML 2017年 1月 4日
電子書 11 Ways to Protect Your Power Path 2019年 7月 3日

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評估板

LM9061EVM — LM9061EVM 高側(cè)保護(hù)控制器評估模塊

LM9061EVM 評估模塊演示的是接電負(fù)載的高側(cè)保護(hù),用于防護(hù)過流和過壓的情況。高側(cè) MOSFET 的柵極驅(qū)動由一個(gè)開/關(guān)輸入控制。過流保護(hù)會在從 MOSFET 中監(jiān)測到壓降 (VDS) 時(shí)啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過高的負(fù)載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動就會關(guān)閉,從而斷開負(fù)載與輸入電源的連接。與負(fù)載串聯(lián)的電流感應(yīng)電阻器并非保護(hù)電路所必需,這樣可以在較高的電流負(fù)載下獲得更高的性能。

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參考設(shè)計(jì)

TIDA-00296 — 汽車車身控制模塊驅(qū)動器參考設(shè)計(jì)

TIDA-00296 是一項(xiàng)重點(diǎn)介紹 TI 高側(cè)和低側(cè)繼電器、電機(jī)以及負(fù)載驅(qū)動器產(chǎn)品系列的參考設(shè)計(jì)。我們選擇了針對該設(shè)計(jì)的負(fù)載(門鎖、車窗升降電機(jī)、座椅加熱器、HVAC、車燈和 LED)來展示 BCM 可驅(qū)動的負(fù)載范圍以及 TI 解決方案如何滿足這些領(lǐng)域。
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SOIC (D) 8 Ultra Librarian

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  • MSL 等級/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
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