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LM9061-Q1

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汽車類 7V 至 26V 高側(cè)保護控制器

產(chǎn)品詳情

Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Automotive Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
Vabsmax_cont (V) 60 Vin (max) (V) 26 Vin (min) (V) 7 Current limit (min) (A) 0.01 Overcurrent response Circuit breaker, Current limiting Fault response Latch-off Overvoltage response Cut-off Rating Automotive Soft start Adjustable Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005 Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125
SOIC (D) 8 29.4 mm2 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

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* 數(shù)據(jù)表 LM9061 and LM9061-Q1 High-Side Protection Controller 數(shù)據(jù)表 (Rev. I) PDF | HTML 2017年 1月 4日
電子書 11 Ways to Protect Your Power Path 2019年 7月 3日

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評估板

LM9061EVM — LM9061EVM 高側(cè)保護控制器評估模塊

LM9061EVM 評估模塊演示的是接電負載的高側(cè)保護,用于防護過流和過壓的情況。高側(cè) MOSFET 的柵極驅(qū)動由一個開/關輸入控制。過流保護會在從 MOSFET 中監(jiān)測到壓降 (VDS) 時啟用,壓降參考的是外部可編程閾值電壓。如果 VDS 電壓因過高的負載電流而超出閾值電壓,MOSFET 的柵極驅(qū)動就會關閉,從而斷開負載與輸入電源的連接。與負載串聯(lián)的電流感應電阻器并非保護電路所必需,這樣可以在較高的電流負載下獲得更高的性能。

用戶指南: PDF
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參考設計

PMP9498 — 具有過流和過壓關斷功能的汽車類電池反向保護參考設計

PMP9498 是一套完整的前端保護解決方案,適用于需要反向電壓、過壓或過流保護的汽車系統(tǒng)。它還實現(xiàn)了負載開關功能,能夠以數(shù)字方式控制負載與輸入電源的連接和斷開。該設計可滿足汽車應用在關閉期間的低 Iq 要求,并且采用了強大的柵極電流源(典型值 30mA),可驅(qū)動大功率 MOSFET,因此適合高電流應用。
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