TXS0206-29

正在供貨

具有 ESD 保護(hù)、EMI 濾波和 2.9V LDO 的 MMC、SD 卡、MemoryStick 電壓轉(zhuǎn)換

產(chǎn)品詳情

Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
Bits (#) 4 Data rate (max) (Mbps) 60 Topology Open drain, Push-Pull Direction control (typ) Auto-direction Vin (min) (V) 1.1 Vin (max) (V) 3.6 Vout (min) (V) 0.88 Vout (max) (V) 3.6 Applications MMC, SD Card, SDIO Features EMI filtering, Edge rate accelerator Technology family TXS Supply current (max) (mA) 0.011 Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 20 3.96 mm2 1.8 x 2.2
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.
  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.
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* 數(shù)據(jù)表 TXS0206-29 MMC, SD Card, Memory Stick(TM) Voltage-Translation Transceiver 數(shù)據(jù)表 2009年 12月 2日
應(yīng)用手冊(cè) 原理圖檢查清單 - 使用自動(dòng)雙向轉(zhuǎn)換器進(jìn)行設(shè)計(jì)的指南 PDF | HTML 英語(yǔ)版 PDF | HTML 2024年 12月 3日
應(yīng)用手冊(cè) Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024年 7月 3日
應(yīng)用手冊(cè) 了解 CMOS 輸出緩沖器中的瞬態(tài)驅(qū)動(dòng)強(qiáng)度與直流驅(qū)動(dòng)強(qiáng)度 PDF | HTML 最新英語(yǔ)版本 (Rev.A) PDF | HTML 2024年 5月 15日
應(yīng)用手冊(cè) SDIO 的電壓轉(zhuǎn)換 PDF | HTML 英語(yǔ)版 PDF | HTML 2022年 5月 19日
選擇指南 Voltage Translation Buying Guide (Rev. A) 2021年 4月 15日

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仿真模型

TXS0206-29 IBIS Model

SCEM564.ZIP (139 KB) - IBIS Model
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封裝 引腳 CAD 符號(hào)、封裝和 3D 模型
DSBGA (YFP) 20 Ultra Librarian

訂購(gòu)和質(zhì)量

包含信息：
  • RoHS
  • REACH
  • 器件標(biāo)識(shí)
  • 引腳鍍層/焊球材料
  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測(cè)
包含信息：
  • 制造廠地點(diǎn)
  • 封裝廠地點(diǎn)

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