ZHCSSA7 october 2020 BQ25302
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| QUIESCENT CURRENT | ||||||
| IVBUS_REVS | VBUS reverse current from BAT/SW to VBUS, TJ = -40°C - 85°C | VBAT = VSW = 4.5V, VBUS is shorted to GND, measure VBUS reverse current | 0.07 | 3 | μA | |
| IQ_VBUS_DIS | VBUS leakage current in disable mode, TJ = -40°C - 85°C | VBUS = 5V, VBAT = 4V, charger is disabled, /EN is pulled high | 4.1 | μA | ||
| IQ_BAT_DIS | Leakage current from battery in disable mode, TJ = -40°C - 65°C | VBUS = 5V, VBAT = 4V, charger is disabled, POL is grounded /EN is floating | 1.0 | μA | ||
| IQ_BAT_HIZ | BAT and SW pin leakage current in HiZ mode, TJ = -40°C - 65°C | VBAT = VSW = 4.5V, VBUS floating | 0.17 | 1.0 | μA | |
| VBUS POWER UP | ||||||
| VVBUS_OP | VBUS operating range | 4.1 | 6.2 | V | ||
| VVBUS_UVLOZ | VBUS power on reset | VBUS rising | 3.0 | 3.80 | V | |
| VVBUS_UVLOZ_HYS | VBUS power on reset hysteresis | VBUS falling | 250 | mV | ||
| VVBUS_LOWV | A condition to turnon REGN | VBUS rising, REGN turns on, VBAT = 3.2V | 3.8 | 3.90 | 4.00 | V |
| VVBUS_LOWV_HYS | A condition to turnon REGN, hysteresis | VBUS falling, REGN turns off, VBAT = 3.2V | 300 | mV | ||
| VSLEEP | Enter sleep mode threshold | VBUS falling, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 30 | 60 | 100 | mV |
| VSLEEPZ | Exit sleep mode threshold | VBUS rising, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG | 110 | 157 | 250 | mV |
| VVBUS_OVP_RISE | VBUS overvoltage rising threshold | VBUS rising, converter stops switching | 6.20 | 6.40 | 6.60 | V |
| VVBUS_OVP_HYS | VBUS overvoltage falling hysteresis | VBUS falling, converter stops switching | 500 | mV | ||
| MOSFETS | ||||||
| RDSON_Q1 | Top reverse blocking MOSFET on-resistance between VBUS and PMID (Q1) | VREGN = 5V | 40 | 65 | mΩ | |
| RDSON_Q2 | High-side switching MOSFET on-resistance between PMID and SW (Q2) | VREGN = 5V | 50 | 82 | mΩ | |
| RDSON_Q3 | Low-side switching MOSFET on-resistance between SW and GND (Q3) | VREGN = 5V | 45 | 72 | mΩ | |
| BATTERY CHARGER | ||||||
| VBATREG | Charge voltage regulation | VSET pin floating, TJ = -40°C to +85°C | 4.078 | 4.100 | 4.118 | V |
| VSET pin is grounded, TJ = -40°C to +85°C | 4.178 | 4.200 | 4.218 | V | ||
| Connect VSET pin to 51kΩ resistor, TJ = -40°C to +85°C | 4.328 | 4.350 | 4.371 | V | ||
| Connect VSET pin to 10kΩ resistor, TJ = -40°C to +85°C | 4.376 | 4.400 | 4.418 | V | ||
| ICHG | Charge current regulation | ICHG set at 1.72A with RICHG=23.2kΩ, VBAT = 3.8V, VBUS = 5V | 1.55 | 1.72 | 1.89 | A |
| ICHG set at 1.0A with RICHG=40.2kΩ, VBAT = 3.8V, VBUS = 5V | 0.90 | 1.00 | 1.10 | A | ||
| ICHG set at 0.5A with RICHG=78.7kΩ, VBAT = 3.8V, VBUS = 5V | 0.40 | 0.517 | 0.60 | A | ||
| ITERM | Termination current | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ, BATREG = 4.2V, VBUS = 5V | 138 | 172 | 206 | mA |
| ITERM | Termination current | ICHG = 1.0A, 10% of ICHG, RICHG=40.2kΩ, BATREG = 4.2V, VBUS = 5V | 70 | 100 | 130 | mA |
| ITERM | Termination current | ICHG=500mA, ITERM =63mA RICHG=78.7kΩ, BATREG = 4.2V, VBUS = 5V | 33 | 63 | 93 | mA |
| IPRECHG | Precharge current | ICHG = 1.72A, 10% of ICHG, RICHG=23.2kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 115 | 172 | 225 | mA |
| ICHG = 1.72A, 10% of ICHG, RICHG=40.2kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 50 | 100 | 150 | mA | ||
| ICHG = 1.72A, 10% of ICHG, RICHG=78.7kΩ, VBATREG = 4.2V, VBAT = 2.5V, VBUS = 5V | 28 | 63 | 98 | mA | ||
| VBAT_SHORT_RISE | VBAT short rising threshold | Short to precharge | 2.05 | 2.20 | 2.35 | V |
| VBAT_SHORT_FALL | VBAT short falling threshold | Precharge to battery short | 1.85 | 2.00 | 2.15 | V |
| IBAT_SHORT | Battery short current | VBAT < VBAT_SHORT_FALL, VBUS = 5V | 24 | 30 | 36 | mA |
| VBAT_LOWV_RISE | Rising threshold | Precharge to fast charge | 2.90 | 3.00 | 3.10 | V |
| VBAT_LOWV_FALL | Falling threshold | Fast charge to precharge | 2.60 | 2.70 | 2.80 | V |
| VRECHG_HYS | Recharge hysteresis below VBATREG | VBAT falling | 110 | 160 | 216 | mV |
| INPUT VOLTAGE / CURRENT REGULATION | ||||||
| VINDPM_MIN | Minimum input voltage regulation | VBAT = 3.5V, measured at PMID pin | 4.0 | 4.07 | 4.2 | V |
| VINDPM | Input voltage regulation | VBAT = 4V, measured at PMID pin, VINDPM = 1.044*VBAT + 0.125V | 4.15 | 4.28 | 4.41 | V |
| IINDPM_2A_5V | Input current regulation | VVBUS = 5V | 2.1 | 2.25 | 2.4 | A |
| BATTERY OVER-VOLTAGE PROTECTION | ||||||
| VBAT_OVP_RISE | Battery overvoltage rising threshold | VBAT rising, as percentage of VBATREG | 101.9 | 103.5 | 105 | % |
| VBAT_OVP_FALL | Battery overvoltage falling threshold | VBAT falling, as percentage of VBATREG | 100.0 | 101.6 | 103.1 | % |
| CONVERTER PROTECTION | ||||||
| VBTST_REFRESH | Bootstrap refresh comparator threshold | (VBTST - VSW) when LSFET refresh pulse is requested, VBUS = 5V | 2.7 | 3 | 3.3 | V |
| IHSFET_OCP | HSFET cycle by cycle over current limit threshold | 5.2 | 6.2 | 6.7 | A | |
| STAT INDICATION | ||||||
| ISTAT_SINK | STAT pin sink current | 6 | mA | |||
| FBLINK | STAT pin blink frequency | 1 | Hz | |||
| FBLINK_DUTY | STAT pin blink duty cycle | 50 | % | |||
| THERMAL REGULATION AND THERMAL SHUTDOWN | ||||||
| TREG | Junction temperature regulation accuracy | 111 | 120 | 133 | °C | |
| TSHUT | Thermal shutdown rising threshold | Temperature increasing | 150 | °C | ||
| Thermal shutdown falling threshold | Temperature decreasing | 125 | °C | |||
| BUCK MODE OPERATION | ||||||
| FSW | PWM switching frequency | SW node frequency | 1.02 | 1.20 | 1.38 | MHz |
| DMAX | Maximum PWM Duty Cycle | 97.0 | % | |||
| REGN LDO | ||||||
| VREGN_UVLO | REGN UVLO | VVBUS rising | 3.85 | V | ||
| VREGN | REGN LDO output voltage | VVBUS = 5V, IREGN = 0 to 16mA | 4.2 | 5.0 | V | |
| ICHG SETTING | ||||||
| VICHG | ICHG pin regulated voltage | 993 | 998 | 1003 | mV | |
| RICHG_SHORT_FALL | Maximum resistance to disable charge | VBUS=5V | 1.00 | kΩ | ||
| RICHG_OPEN_RISE | Minimum resistance to disable charge | VBUS=5V, | 565 | kΩ | ||
| RICHG_MAX | Maximum programmable resistance at ICHG | VBUS=5V | 250.00 | kΩ | ||
| RICHG_MIN_SLE0 | Minimum programmable resistance at ICHG | VBUS=5V | 17.40 | kΩ | ||
| RICHG_HIGH | ICHG setting resistor threshold to clamp precharge and termination current to 63mA | RICHG > RICHG_HIGH | 60.0 | 65.0 | 70.0 | kΩ |
| KICHG | Charge current ratio | ICHG set at 1.72A with RICHG = 23.2kΩ, VBAT=3.8V, VBUS=5V, ICHG = KICHG / RICHG | 36000 | 40000 | 44000 | AxΩ |
| KICHG | Charge current ratio | ICHG set at 1.0A with RICHG = 40.2kΩ, VBAT = 3.8V, VBUS = 5V, ICHG = KICHG / RICHG | 36000 | 40280 | 44000 | AxΩ |
| KICHG | Charge current ratio | ICHG set at 0.5A with RICHG = 78.7kΩ, VBAT = 3.8V, VBUS = 5V, ICHG = KICHG / RICHG | 32000 | 40700 | 48000 | AxΩ |
| COLD/HOT THERMISTOR COMPARATOR | ||||||
| VT1% | TCOLD (0°C) threshold, charge suspended if thermistor temperature is below T1 | VTS rising, as percentage to VREGN | 72.68 | 73.5 | 74.35 | % |
| VT1% | VTS falling | As Percentage to VREGN | 70.68 | 71.5 | 72.33 | % |
| VT3% | THOT (45°C) threshold, charge suspended if thermistor temperature is above T_HOT | VTS falling, as percentage to VREGN | 46.35 | 47.25 | 48.15 | % |
| VT3% | VTS rising | As percentage to VREGN | 47.35 | 48.25 | 49.15 | % |
| LOGIC I/O PIN CHARACTERESTICS (POL, EN) | ||||||
| VILO | Input low threshold | Falling | 0.40 | V | ||
| VIH | Input high threshold | Rising | 1.3 | V | ||
| IBIAS | High-level leakage current at /EN pin | /EN pin is pulled up to 1.8 V | 1.0 | μA | ||