SLVSBW9C April 2013 – December 2015 DRV8832-Q1
PRODUCTION DATA.
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.