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ZHCSO26A November 2021 – March 2022 LM66100-Q1

PRODUCTION DATA

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DCK|6
- MPDS114F

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購(gòu)信息

zhcso26a_oa

6.5 Electrical Characteristics

Typical values are at 25°C with an input voltage of 3.6V. Maximum and minimum values are across the entire operating voltage range, from 1.5V to 5.5V. (unless otherwise noted)

PARAMETER		TEST CONDITIONS			MIN	TYP	MAX	UNIT
Input Supply (VIN)
I_SD,VIN	VIN Shutdown Current	VOUT = VIN VCE > VIN + 80 mV I_OUT = 0 A (VOUT = open)		25°C		0.12	0.3	μA
I_SD,VIN	VIN Shutdown Current	VOUT = VIN VCE > VIN + 80 mV I_OUT = 0 A (VOUT = open)		–40°C to 125°C			0.3	μA
I_Q,VIN	VIN Quiescent Current	VOUT = VIN VCE < VIN – 250 mV I_OUT = 0 A (VOUT = open)		25°C		0.15	0.3	μA
I_Q,VIN	VIN Quiescent Current	VOUT = VIN VCE < VIN – 250 mV I_OUT = 0 A (VOUT = open)		–40°C to 125°C			0.3	μA
I_{OUT, OFF}	OUT to IN Leakage Current (Current out of VIN)	VOUT – VIN ≤ 5.5 V VCE > VIN + 80 mV		25°C		0.2	0.5	μA
				–40°C to 85°C			2.7	μA
				–40°C to 125°C			8	μA
		VOUT – VIN ≤ 4.5 V VCE > VIN + 80 mV		–40°C to 85°C			1.7	μA
		VOUT – VIN ≤ 4.5 V VCE > VIN + 80 mV		–40°C to 125°C			5.1	μA
		VOUT – VIN ≤ 1.0 V VCE > VIN + 80 mV		–40°C to 85°C			0.7	μA
		VOUT – VIN ≤ 1.0 V VCE > VIN + 80 mV		–40°C to 125°C			2.1	μA
ON-Resistance (RON)
R_ON	ON-State Resistance	I_OUT = –200 mA	VIN = 5 V	25°C		79	95	mΩ
				–40°C to 85°C			110
				–40°C to 125°C			120
R_ON	ON-State Resistance	I_OUT = –200 mA	VIN = 3.6 V	25°C		91	110	mΩ
				–40°C to 85°C			125
				–40°C to 125°C			140
R_ON	ON-State Resistance	I_OUT = –200 mA	VIN = 1.8 V	25°C		141	180	mΩ
				–40°C to 85°C			210
				–40°C to 125°C			230
Comparator Chip Enable (CE)
V_ON	Turn ON Threshold	VCE – VIN		–40°C to 125°C	–250	–150	–80	mV
V_OFF	Turn OFF Threshold	VCE – VIN		–40°C to 125°C	0	35	80	mV
I_CE	CE Pin Leakage Current	VCE < VIN – 250 mV		–40°C to 125°C	0	160	300	nA
I_CE	CE Pin Leakage Current	VCE > VIN + 80 mV		–40°C to 125°C	0	400	610	nA
Reverse Current Blocking (RCB) and Body Diode Characteristics
I_RCB	Reverse Activation Current	VCE = VOUT		–40°C to 125°C		0.5	1	A
V_FWD	Body Diode Forward Voltage	I_OUT = 10 mA VCE > VIN + 80 mV		–40°C to 125°C	0.1	0.5	1.1	V
Status Indication (ST)
V_{OL, ST}	Output Low Voltage	IST = 1 mA		–40°C to 125°C			0.1	V
t_ST	Status Delay Time	VCE transitions from low to high		–40°C to 125°C		1		μs
I_ST	ST Pin Leakage Current	VCE < VIN – 250 mV		–40°C to 125°C	–20		20	nA