4 修訂歷史記錄

Changes from F Revision (October 2018) to G Revision

• Changed pin diagram in Pin Configuration and Functions section to correct typographical errorGo

Changes from E Revision (December 2017) to F Revision

• Deleted 運(yùn)行壽命測(cè)試 Delta 參數(shù)表Go
• 更新特性 部分的列表項(xiàng)以包含 SMD 信息Go
• 更新應(yīng)用 部分Go
• Added 向“器件信息”表中添加新的可訂購(gòu)器件Go
• Added 工程樣片腳注Go
• Deleted “器件信息”表中的 LM98640-MDR 和 LM9864-MDPGo
• Updated thermal metrics Go
• Deleted 15 MHz and 25 MHz min/max specGo
• Changed ENOB typical for subgroup 6 at 25 MHz Go
• Added minimum spec value for ENOB subgroups 4,5 at 40 MHz Go
• Changed pulses to windowsGo
• Updated wording in CDS Mode CLAMP/SAMPLE Adjust section Go
• Updated wording in Input Bias and Clamping section Go

Changes from D Revision (September 2015) to E Revision

• Changed 在“器件信息”表中將 64 引線更改為 68 引線Go

Changes from C Revision (April 2013) to D Revision

• 根據(jù)新的數(shù)據(jù)表標(biāo)準(zhǔn)添加、更新或修訂以下部分：說明、引腳配置和功能、規(guī)格、詳細(xì) 說明、應(yīng)用和實(shí)施、電源建議、布局、器件和文檔支持、機(jī)械、封裝和訂購(gòu)信息Go
• Changed CLPIN I_IH from 44 to 100 μAGo
• Changed SEN I_IH from 28 to 100 μA Go
• Changed SEN I_IL from –70 to –100 μAGo
• Changed INCLK I_IHL from 36 to 100 μA Go
• Added mininum limits for t_DSO, t_DSE, t_QSR and t_QHF and deleted maximum limitsGo
• Added details on register write. Go
• Changed Device Revision ID from x01 to x48 Go
• Changed Device Revision ID from x01 to x48 Go
• Added TID test and ELDRS-free information Go

Changes from B Revision (January 2011) to C Revision

• 將美國(guó)國(guó)家半導(dǎo)體數(shù)據(jù)表的布局更改為 TI 格式Go