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UCC21755-Q1

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具有主動(dòng)保護(hù)和隔離式感應(yīng)功能的汽車級 ±10A 隔離式單通道柵極驅(qū)動(dòng)器

產(chǎn)品詳情

Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (μs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
Number of channels 1 Isolation rating Reinforced Power switch IGBT, SiCFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 10 Peak output current (source) (typ) (A) 10 Peak output current (sink) (typ) (A) 10 Features Active miller clamp, Desaturation (DESAT) protection, Disable, Enable, Fault reporting, High CMTI, Integrated analog to PWM sensor, Power good, Soft turn-off, Split output Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 33 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (μs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12 TI functional safety category Functional Safety Quality-Managed
SOIC (DW) 16 106.09 mm2 10.3 x 10.3
  • 5.7kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 5V threshold
  • 4A internal active Miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5.7kVRMS single-channel isolated gate driver
  • AEC-Q100 Qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • Functional Safety Quality-Managed
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 5V threshold
  • 4A internal active Miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC, or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over- or under-shoot transient voltage immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).

The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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UCC21756-Q1 正在供貨 具有主動(dòng)保護(hù)和隔離式感應(yīng)功能的汽車類 ±10A 隔離式單通道柵極驅(qū)動(dòng)器 5-V DESAT version enables faster short-circuit protection for SiC FETs, which is critical to prevent SiC FET destruction

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* 數(shù)據(jù)表 UCC21755-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI 數(shù)據(jù)表 (Rev. A) PDF | HTML 2024年 6月 17日
應(yīng)用手冊 為 IGBT 和 SiC 電源模塊選擇適當(dāng)?shù)谋Ｗo(hù)方法 PDF | HTML 英語版 PDF | HTML 2025年 1月 8日
應(yīng)用簡報(bào) 我的設(shè)計(jì)是否需要米勒鉗位？ PDF | HTML 英語版 PDF | HTML 2025年 1月 6日
應(yīng)用手冊 驅(qū)動(dòng)芯片退飽和保護(hù)（DESAT）應(yīng)用指導(dǎo) 2024年 1月 3日
證書 UCC217xx/-Q1 CQC Certificate of Product Certification 2023年 6月 7日

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評估板

UCC21750QDWEVM-025 — 適用于 SiC 和 IGBT 晶體管和電源模塊的驅(qū)動(dòng)和保護(hù)評估板

UCC21750QDWEVM-025 是一個(gè)緊湊的單通道隔離式柵極驅(qū)動(dòng)器板，可提供采用 150mm x 62mm x 17mm 和 106mm x 62mm x 30mm 封裝的 SiC MOSFET 和 Si IGBT 電源模塊所需的驅(qū)動(dòng)電壓、偏置電壓，以及基于去飽和功能的保護(hù)和診斷。此 TI EVM 以 5.7kVrms 增強(qiáng)型隔離驅(qū)動(dòng)器 UCC21750 為基礎(chǔ)，后者采用 SOIC-16DW 封裝，具有 8.0mm 爬電距離和間隙。該 EVM 包含基于 SN6505B 的隔離式直流/直流變壓器偏置電源。
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